| PART |
Description |
Maker |
| CXA1616S CXA1616N |
Sync Discriminator for CRT Displays
|
Philips
Sony Corporation
|
| EDI2CG472256V EDI2CG472256V10D2 EDI2CG472256V12D2 |
8 Megabyte Sync/Sync Burst, Dual Key DIMM
|
White Electronic Designs Corporation
|
| EDI2AG272129V10D1 EDI2AG272129V12D1 EDI2AG272129V9 |
2 Megabyte Sync/Sync Burst, Small Outline DIMM
|
WEDC[White Electronic Designs Corporation]
|
| WT9051 |
SYNC signal processor for Multi-Sync display
|
Weltrend
|
| EDI2CG272128V12D1 EDI2CG272128V15D1 EDI2CG272128V9 |
2x128Kx72, 3.3V Sync/Sync Burst SRAM SO-DIMM
|
WEDC[White Electronic Designs Corporation]
|
| GS8324Z18B-225I GS8324Z18B-250I GS8324Z18B-133I GS |
225MHz 6.5ns 2M x 18 36Mb sync NBT SRAM
250MHz 6ns 2M x 18 36Mb sync NBT SRAM
133MHz 11ns 2M x 18 36Mb sync NBT SRAM
166MHz 8.5ns 2M x 18 36Mb sync NBT SRAM
150MHz 10ns 2M x 18 36Mb sync NBT SRAM
200MHz 7.5ns 2M x 18 36Mb sync NBT SRAM
166MHz 7ns 2M x 18 36Mb sync NBT SRAM
133MHz 11ns 1M x 36 36Mb sync NBT SRAM
150MHz 10ns 1M x 36 36Mb sync NBT SRAM
166MHz 8.5ns 1M x 36 36Mb sync NBT SRAM
200MHz 7.5ns 1M x 36 36Mb sync NBT SRAM
225MHz 6.5ns 1M x 36 36Mb sync NBT SRAM
250MHz 6ns 1M x 36 36Mb sync NBT SRAM
|
GSI Technology
|
| CY7C1297H-133AXC |
1-Mbit (64K x 18) Flow-Through Sync SRAM; Architecture: Standard Sync, Flow-through; Density: 1 Mb; Organization: 64Kb x 18; Vcc (V): 3.1 to 3.6 V
|
CYPRESS SEMICONDUCTOR CORP
|
| GS840FH18AT-10 GS840FH18AT-10I GS840FH18AT-12 GS84 |
10ns 256K x 18 4Mb sync burst SRAM
12ns 256K x 18 4Mb sync burst SRAM
8.5ns 256K x 18 4Mb sync burst SRAM
8ns 256K x 18 4Mb sync burst SRAM
10ns 128K x 32 4Mb sync burst SRAM
|
GSI Technology
|
| CY7C09269V-12AC CY7C09289V-9AI CY7C09379V-12AC CY7 |
Memory : Dual-Ports
True Dual-Ported memory cells which allow simultaneous access of the same memory location
3.3V 16K/32K/64K x16/18 Synchronous Dual-Port Static RAM
3.3V 16K/32K/64K x 16/18 Synchronous Dual-Port Static RAM
SYNC SRAM|32KX18|CMOS|QFP|100PIN|PLASTIC
SYNC SRAM|64KX16|CMOS|QFP|100PIN|PLASTIC
SYNC SRAM|32KX16|CMOS|QFP|100PIN|PLASTIC
SYNC SRAM|16KX16|CMOS|QFP|100PIN|PLASTIC
SYNC SRAM|16KX18|CMOS|QFP|100PIN|PLASTIC 同步静态存储器| 16KX18 |的CMOS | QFP封装| 100引脚|塑料
|
CYPRESS[Cypress Semiconductor]
Cypress Semiconductor, Corp.
|
| DTV1500M DTV1500MD DTV1500MF DTV1500MFP DTV1500MXX |
HIGH VOLTAGE DAMPER DIODE (CRT HORIZONTAL DEFLECTION)
6 A, 1500 V, SILICON, RECTIFIER DIODE, TO-220AC
CRT HORIZONTAL DEFLECTION HIGH VOLTAGE DAMPER DIODE
From old datasheet system
HIGH VOLTAGE DAMPER DIODE (CRT HORIZONTAL DEFLECTION)
|
SGS Thomson Microelectronics
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
|
| GS832218B-133 GS832218B-133I GS832218B-150 GS83221 |
64K 3.3 VOLT SERIAL CONFIGURATION PROM 200万1800万36，为512k × 72分配36MB的S /双氰胺同步突发静态存储器
GIGABASE 350 CAT5E PATCH 1 FT, SNAGLESS, WHITE 200万1800万36，为512k × 72分配36MB的S /双氰胺同步突发静态存储器
2M x 18, 1M x 36, 512K x 72 36Mb S/DCD Sync Burst SRAMs 200万18100万36，为512k × 72分配36MB的S /双氰胺同步突发静态存储器
2M x 18, 1M x 36, 512K x 72 36Mb S/DCD Sync Burst SRAMs 200万1800万36，为512k × 72分配36MB的S /双氰胺同步突发静态存储器
2M x 18, 1M x 36, 512K x 72 36Mb S/DCD Sync Burst SRAMs 200万1800万36，为512k × 72分配36MBS /双氰胺同步突发静态存储器
DIODE, ZENER, 4.3V, 0.5W, 5%, -65-175C, DO-35
(GS832218 / GS832236 / GS832272) S/DCD Sync Burst SRAMs
|
ETC
Electronic Theatre Controls, Inc.
List of Unclassifed Manufacturers
List of Unclassifed Man...
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